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| Power Transistors www.jmnic.com 2SC4278 Silicon NPN Transistors B C E Features With TO-247 package Complement to type 2SA1633 Absolute Maximum Ratings Tc=25 SYMBOL VCBO VCEO VCER VEB IB IC PD Tj Tstg PARAMETER Collector to base voltage Collector to emitter voltage Emitter to base voltage Emitter to base voltage Base Current Collector current-Continuous Total Power Dissipation@TC=25 Derate above 25 Junction temperature Storage temperature 10 100 150 -65~150 A W W/ 5 V RATING 150 150 UNIT V V TO-247 Electrical Characteristics Tc=25 SYMBOL VCEO(SUS) VCBO ICEO ICBO IEBO VEBO VCE(sat-1) VCE(sat-2) VCE(sat-3) VCE(sat-4) hFE-1 hFE-2 VBE(sat) fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Base Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Emitter Cutoff Current Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Collector-emitter saturation voltages Forward current transfer ratio Forward current transfer ratio Base-emitter Saturation voltages Current Gain-Bandwidth Product CONDITIONS IC=30mA; IB=0 IC=1mA; IE=0 VCE=150V; IB=0 VCB=150V; IE=0 IE=5mA; IC=0 IC=5A; IB=0.5A MIN 150 150 MAX UNIT V V 500 100 uA uA 5 2.0 V V IC=1A; VCE=5V 60 320 |
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